SiC肖特基二极管在升压斩波电路中的应用分析  

Application and Analysis of SiC Schottky Diode in Boost Chopper DC Converter

作　　者：雷海峰[1] 温家良[2] 金锐[2] 刘明光[1] 

机构地区：[1]北京交通大学,北京100044 [2]中国电力科学研究院,北京100192

出　　处：《电力电子技术》2011年第6期103-105,共3页Power Electronics

基　　金：国家电网公司科技项目(ZL71-09-001)~~

摘　　要：对碳化硅(SiC)肖特基二极管(SBD)在升压斩波电路中的应用进行了深入研究。实验中分别对普通Si二极管和SiC SBD进行了比较,结果表明,SiC二极管具有良好的动态特性,其反向恢复电流约为普通Si二极管的1/4,同时对IGBT开通时的电流过冲有很好的抑制作用。此外,对载流子寿命对二极管反向恢复的影响进行了仿真分析,结果表明,缩短少数载流子寿命能很好地抑制反向恢复电流峰值,减小反向恢复时间。The application of SiC Schottky diode in the Boost chopper DC converter is researched in-depth.The experiment uses the ordinary Si diode and the SiC Schottky diode for comparison.Experimental results show that the SiC Schottky diode has a good dynamic performance,the reverse recovery current is smaller than the Si diode aver-age of about 4 times and has good inhibitory for the IGBT turn-on current overshoot.In addition,the effect of carrier lifetime to the diode reverse recovery is analyzed,simulation results show that shorten the carrier lifetime can reduce the peak reverse recovery current and reverse recovery time.

关 键 词：肖特基二极管 碳化硅 反向恢复 少子寿命 

分 类 号：TN31[电子电信—物理电子学]