300mm硅片化学机械抛光压力控制技术研究  

Study on Pressure Control Technology of 300mm Prime Wafer CMP

作　　者：王东辉[1] 郭强生[1] 柳滨[1] 陈威[1] 王伟[1] 

机构地区：[1]中国电子科技集团公司第四十五研究所,北京101601

出　　处：《电子工业专用设备》2011年第8期1-4,37,共5页Equipment for Electronic Products Manufacturing

基　　金：国家重大科技专项(2009ZX02011-005A)

摘　　要：介绍了一种应用于硅片化学机械抛光(CMP)设备的压力控制技术,综合利用在线检测方法和离线检测方法,借助于Matlab数值分析软件分析抛光主轴压力设定值、气缸气压值、传感器示值以及检测仪器测试值之间的关系,并建立了主轴压力闭环控制系统,达到精确控制主轴压力的目的。工艺实验证明,主轴压力闭环控制系统稳定、可靠、精确。This paper introduces a pressure control technology which is applied to 300mm prime wafer chemical mechanical polishing（CMP） equipment.Utilizing the method of online detection and offline detection,the relationship among the value of polishing spindle pressure,cylinder pressure,spindle sensor and testing instrument is analyzed by using the Matlab numerical analysis software.Then the closed-loop control system of spindle pressure is established.The objective of controlling spindle pressure accurately is achieved.The technical experiment proved that the closed-loop control system of spindle pressure is steady,reliable and accurate.

关 键 词：化学机械抛光 压力检测 数据处理 闭环控制 

分 类 号：TN305.2[电子电信—物理电子学]