磨料黏度对CMP抛光速率的影响及机理的研究  

Effects and Mechanization of Abrasive Viscosity on Removal Rate in CMP

作　　者：李伟娟[1] 周建伟[1] 刘玉岭[1] 何彦刚[1] 刘效岩[1] 甘小伟[1] 

机构地区：[1]河北工业大学微电子研究所,天津300130

出　　处：《半导体技术》2011年第9期664-667,共4页Semiconductor Technology

基　　金：国家中长期科技发展规划02科技重大专项(2009ZX02308)

摘　　要：抛光磨料在抛光衬底和抛光垫间做磨削运动,它是CMP工艺的重要组成部分,是决定抛光速率和平坦化能力的重要影响因素。因此分析磨料的各物性参数对CMP过程的影响尤为重要。随着晶圆表面加工尺寸的进一步精密化,磨料黏度作为抛光磨料重要物性参数之一,受到越来越多的重视。根据实验结果从微观角度研究了磨料黏度对CMP抛光速率的影响及机理,并由此得出当抛光液磨料黏度为1.5 mPa.s时,抛光速率可达到458 nm/min且抛光表面粗糙度为0.353 nm的良好表面状态。Polishing abrasive makes the ablation motion between the polishing substrate and polishing pad,it is the important part of CMP technology and the important influencing factors to decide the polishing rate and planarization capability.The analysis of the effects of abrasive parameters on CMP process is especially important.With the wafer surface size becomes preciser,abrasive viscosity as one of important abrasive parameters for CMP should gain more and more attention.According to the experimental results,the impact and mechanism of the abrasive viscosity on the polishing rate from the microscopic angle were studied.The results show that the removal rate reach 458 nm/min,the polishing surface roughness is 0.353 nm when polishing abrasive viscosity is 1.5 mPa·s.

关 键 词：黏度 去除速率 磨料 化学机械抛光 表面状态 

分 类 号：TN305.2[电子电信—物理电子学]