SiN_x插入层的生长位置对GaN外延薄膜性质的影响(英文)  

The Optical and Electrical Properties of GaN Epitaxial Films with SiN_x Interlayers Inserted at Different Position

作　　者：马紫光[1] 王文新 王小丽[1] 陈耀[1] 徐培强[1] 江洋[1] 贾海强[1] 陈弘[1] 

机构地区：[1]中国科学院物理研究所北京凝聚态物理国家实验室,北京100190

出　　处：《发光学报》2011年第10期1014-1019,共6页Chinese Journal of Luminescence

基　　金：Project supported by National Natural Science Foundations(5087214,60890192/F0404);the Chinese Science and Technology Ministry(973,2010CB327501)~~

摘　　要：系统研究了纳米量级的多孔SiNx插入层生长位置对高质量GaN外延薄膜性质的影响。高分辨X射线衍射测量结果表明:SiNx插入层生长在GaN粗糙层上能够得到最好的晶体质量。利用测量结果分别计算出了螺位错和刃位错的密度。此外,GaN薄膜的光学、电学性质分别用Raman散射能谱、低温光致发光能谱和霍尔测量的方法进行了表征。实验发现:SiNx插入层的生长位置对GaN薄膜的应变大小基本没有影响;但插入层的位置改变了薄膜中的本征载流子浓度。GaN films with SiNx interlayer were grown on sapphire substrates by metal organic chemical vapor deposition.The effect of nanoporous SiNx interlayer growth position on the properties of high-quality GaN epitaxial films was investigated systematically.The high-resolution X-ray diffraction spectra was achieved when a SiNx interlayer was adopted and inserted on a rough GaN layer.The screw and edge dislocation densities have been calculated.The optical and electrical properties of the GaN films were characterized by Raman scattering spectra,low temperature photoluminescence spectra and Hall measurements,etc.The position of the SiNx interlayer has no impact on the strain in GaN films,but the residual carrier concentration changes with the position of the interlayer.

关 键 词：金属有机物化学气相沉积(MOCVD) GAN SINX 高分辨X射线衍射 

分 类 号：O472[理学—半导体物理]