有机胺碱对硅粗抛光及表面微形貌的影响  

Effect of Organic Amine Alkali on Silicon Stock Polishing and Surface Micro Morphology

作　　者：王娜[1] 刘玉岭[1] 孙鸣[1] 杨立兵[1] 高净[1] 刘利宾[1] 

机构地区：[1]河北工业大学微电子研究所,天津300130

出　　处：《微纳电子技术》2011年第11期749-752,共4页Micronanoelectronic Technology

基　　金：国家中长期科技发展规划02科技重大专项(2009ZX02308)

摘　　要：硅单晶抛光片是极大规模集成电路应用最广泛的衬底材料,抛光液为影响硅单晶片抛光最关键的因素。通过改变抛光液中有机胺碱配比来调节抛光液的pH值。实验结果表明:随着有机胺碱比例的不断增加,pH值随之上升,硅片的去除速率(material removal rate,MRR)先增大后减小。pH值在10.5左右时去除速率达到最大值(1706nm/min)。此时用Agilent 5600LS型原子力显微镜测得硅片表面的粗糙度为0.369nm。并用马尔文Zetasizer 3000HSA纳米粒度分析仪测定不同有机胺碱浓度下的抛光液中水溶胶磨粒粒径变化。通过对实验后晶片表面进行检测并结合去除速率综合考虑,抛光液pH值宜选择为10.5左右。抛光速率在pH值为10.3～10.6比较稳定。The monocrystalline silicon polished wafers are widely used for the substrate of integrated circuits,the slurry is the most critical effect factor for CMP.The pH value of the slurry was regulated by changing the concentration of organic amine alkali.The results show that the pH value increases and the material removal rate of silicon wafer first increases and then decreases with the increase of the concentration for the organic amine alkali.The highest value of removal rate（1 706 nm/min）was reached at the pH value of 10.5.At this point,the surface roughness of silicon wafer was 0.369 nm measured by the Agilent 5600LS atomic force microscopy.The variation in particle size of the slurry under different concentrations of organic amine alkali was measured by Malvern Zetasizer 3000HSA.By measuring the silicon wafer surface after the experiment and considering the removal rate,the pH value of slurry should be about 10.5.The poli-shing rate is stable at the pH value of 10.3-10.6.

关 键 词：硅单晶片 有机胺碱 抛光液 抛光速率 表面粗糙度 

分 类 号：TN305.2[电子电信—物理电子学]