分子束外延反射式高能电子衍射的强度振荡采集系统及其应用  

ACQUISITION SYSTEM OF RHEED INTENSITY OSCILLATIONS AND ITS APPLICATION DURING THE MBE GROWTH

作　　者：张晓秋[1] 朱战萍[1] 孙殿照[1] 孔梅影[1] 曾一平[1] 郑海群[1] 阎春辉 

机构地区：[1]中国科学院半导体研究所

出　　处：《真空科学与技术学报》1990年第3期205-207,共3页Chinese Journal of Vacuum Science and Technology

摘　　要：在分子束外延(MBE)设备上设计和装配了一套反射式高能电子衍射(RHEED)强度振荡的采集系统。用本系统在MBE生产GaAs和Al_xGa_(1-x)As材料时观察了RHEED强度振荡现象。并“在位”得到GaAs和Al_xGa_(1-x)As材料的生长速率和Al_xGa_(1-x)As材料的AlAs摩尔分数,即x值。An acquisition system intensity oscillation of the reflection high energy electron diffraction (RHEED) is constructed and equipped on our molecular beam epitaxy (MBE) machine. Intensity oscillation of the RHEED on a(100 )oriented substrate were observed during the MBE growth of GaAs anti Al_xGa_(1-x) As. Uslng this aquisition system of intensity oscillation of RHEED, growth rates of GaAs and Al_xGa_(1-x) As, and the AlAs mole fraction x of the Al_xGa_(1-x) As were accurately detected 'in-situ' during the growth.

关 键 词：高能电子衍射 分子束外延 采集系统 反射式 振荡现象 外延层 采集记录 摩尔分数 杂散光 超晶格 

分 类 号：TB7-55[一般工业技术—真空技术]