单层二氧化铪(HfO_2)薄膜的特性研究  

Characteristics of Single Layer HfO_2 Thin Films

作　　者：艾万君[1,2] 熊胜明[1] 

机构地区：[1]中国科学院光电技术研究所,成都610209 [2]中国科学院研究生院,北京100049

出　　处：《光电工程》2012年第2期134-140,共7页Opto-Electronic Engineering

摘　　要：利用电子束蒸发、离子束辅助沉积和离子束反应溅射三种制备方法制备了单层HfO2薄膜,对薄膜样品的晶体结构、光学特性、表面形貌以及吸收特性进行了研究。实验结果表明,薄膜特性与制备工艺有着密切的关系。电子束蒸发和离子束反应溅射制备的薄膜为非晶结构,而离子束辅助制备的薄膜为多晶结构。电子束蒸发制备的薄膜折射率较低,薄膜比较疏松,表面粗糙度较小,吸收相对较小,而离子束辅助以及离子束反应溅射制备的薄膜折射率较高,薄膜的结构比较致密,但表面粗糙度较大,吸收相对较大。不同制备工艺条件下薄膜的光学能隙范围为5.30～5.43eV,对应的吸收边的范围为228.4～234.0nm。Single layer HfO2 thin films have been prepared respectively by Electron Beam Evaporation （EBD）, Ion Assisted Deposition （IAD） and Ion Beam Reactive Sputtering （IBRS）. Crystal structures, optical properties, surface topography and absorption of these deposited films have been studied. It is found that thin film properties have a close relationship with deposition technologies. The EBD and IBRS films are largely amorphous, whereas the IAD films are polycrystalline. Comparison with EBD films, the IAD and IBRS films, of which the structures are very compact, display higher refractive index, surface roughness and absorption. The optical band gap energy of these films are found to be 5.30～5.43 eV, and the corresponding optical absorption edge range are found to be from 228.4 nm to 234.0 nm.

关 键 词：电子束蒸发 离子束辅助沉积 离子束反应溅射 HFO2薄膜 薄膜特性 

分 类 号：O484.4[理学—固体物理]