铜互连线低压无磨料化学机械平坦化技术  

Technology of Abrasive-Free Slurry for Copper Interconnections Chemical Mechanical Planarization at Low Down Pressure

作　　者：刘效岩[1] 刘玉岭[1] 梁艳[2] 胡轶[1] 刘海晓[1] 李晖[1] 

机构地区：[1]河北工业大学,天津300130 [2]河北化工医药职业技术学院,河北石家庄050026

出　　处：《稀有金属材料与工程》2012年第4期717-721,共5页Rare Metal Materials and Engineering

基　　金：国家中长期科技发展规划02科技重大专项(2009ZX02308)

摘　　要：在低压无磨料条件下,利用碱性FA/O型螯合剂具有极强螯合能力的特性,对铜互连线进行化学机械平坦化,获得了高抛光速率和表面一致性。提出了铜表面低压无磨料抛光技术的平坦化原理,在分析了抛光液化学组分与铜化学反应机理的基础上,对抛光液中的主要成分FA/O型螯合剂、氧化剂的配比和抛光工艺参数压力、抛光机转速进行了研究。结果表明:在压力为6.34kPa和抛光机转速为60r/min时,抛光液中添加5%螯合剂与1%氧化剂(体积分数,下同),抛光速率为1825nm/min,表面非均匀性为0.15。The characteristics of FA/O chelating agent with extremely strong chelating ability were used for the chemical-mechanical planarization of copper interconnection on the conditions of abrasive-free slurry and low down pressure to obtain a high polishing rate and a fine within-wafer non-uniformity（WIWNU）.The planarization principle of the abrasive-free alkaline slurry technology of the copper surface at low down pressure was put forward.Based on the analyzing of the planarization principle and the chemical reaction mechanism in abrasive-free alkaline slurry at low down pressure the main ingredient and prescription of slurry（containing FA/O chelating agent and oxidizer） and polishing technological parameter（pressure and speed） were investigated.The results indicate that the polishing rate can reach 1825 nm/min and WIWNU is 0.25 when the down pressure is 6.3 kPa,the polishing machine speed 60 r/min,the slurry contains 5vol% chelating agent and 1 vol% oxidizer.

关 键 词：铜互连线 无磨料 低压 FA/O型螯合剂 化学机械平坦化 

分 类 号：TN405[电子电信—微电子学与固体电子学]