微波等离子体化学气相沉积法制备C_3N_4薄膜的研究  

Studies of C_3N_4 Thin Films Prepared by Microwave Plasma Chemical Vapor Deposition

作　　者：张永平[1] 顾有松[1] 常香荣[1] 田中卓[1] 时东霞[2] 张秀芳[2] 袁磊[2] 

机构地区：[1]北京科技大学材料物理系,北京100083 [2]中国科学院北京真空物理实验室,北京100080

出　　处：《真空电子技术》2000年第1期52-55,共4页Vacuum Electronics

基　　金：国家自然科学基金资助课题! ( 19674 0 0 9)

摘　　要：本文采用微波等离子体化学气相沉积法(MPCVD),高纯N2(99.999%)和CH4(99.9%)作反应气体,在多晶Pt(99.99%)基片上沉积C3N4薄膜。X-射线能谱(EDX)分析结果表明N/C原子比为1.0～1.4,接近C3N4的化学比;X射线衍射谱说明薄膜主要由β和α-C3N4组成;FT-IR谱和Raman谱支持C-N键的存在。C 3N 4 thin films have been prepared on Pt substrates by microwave plasma chemical vapor deposition (MPCVD) method.Energy dispersive X ray (EDX) analysis showed that N/C ratios of the films can be as high as 1.33.X ray diffraction results showed that the films consisted of β and α C 3N 4.FT IR and Raman spectroscopy supported the existence of C N single bond.

关 键 词：微波等离子体 化学气相沉积 薄膜 

分 类 号：TN304.055[电子电信—物理电子学]