500V沟槽阳极LIGBT的设计与优化  

Design and Optimization of 500 V Trench Anode LIGBT

作　　者：邵雷[1] 李婷[1] 陈宇贤[1] 王颖[1] 

机构地区：[1]哈尔滨工程大学信息与通信工程学院,哈尔滨150001

出　　处：《北京工业大学学报》2012年第8期1153-1157,共5页Journal of Beijing University of Technology

基　　金：哈尔滨市科技创新人才研究专项基金资助项目(RC2007QN009016)

摘　　要：介绍一种双外延绝缘体上硅(silicon on insulator,SOI)结构的沟槽阳极横向绝缘栅双极型晶体管(trenchanode lateral insulated-gate bipolar transistor,TA-LIGBT).沟槽阳极结构使电流在N型薄外延区几乎均匀分布,并减小了元胞面积;双外延结构使漂移区耗尽层展宽,实现了薄外延层上高耐压低导通压降器件的设计.通过器件建模与仿真得到最佳TA-LIGBT的结构参数和模拟特性曲线,所设计器件击穿电压大于500 V,栅源电压Vgs=10 V时导通压降为0.2 V,特征导通电阻为123.6 mΩ.cm2.A type of silicon on insulator （SOI） trench anode lateral insulated-gate bipolar transistor （ TA- LIGBT）with dual-epi layers is introduced in this paper. TA-LIGBT exploits the structure of trench electrode to decrease the cell size and the current flowlines of TA-LIGBT are uniformly distributed in the N-drift region. TA-LIGBT has achieved lower on-state drop and higher breakdown voltage on thin epitaxial layer because dual-epi layer can widen the depletion region. Optimal structure is obtained for 500 V TA-LIGBT through simulation. Characteristics of the device are also given. Results show that the device has a breakdown voltage above 500 V, a forward voltage of 0.2 V for Vgs of 10 V, and the specific on-resistance of 123.6 mΩ cm2.

关 键 词：沟槽 横向绝缘栅双极晶体管 击穿电压 导通压降 阈值电压 特征导通电阻 

分 类 号：TN342.4[电子电信—物理电子学]