大面积金刚石膜生长过程中的缺陷和内应力  

Defect and internal stress of the growth of large area diamond films

作　　者：汪建华[1] 刘鹏飞[1] 熊礼威[1] 刘繁[1] 江川[1] 苏含[1] 

机构地区：[1]武汉工程大学材料科学与工程学院,湖北武汉430074

出　　处：《武汉工程大学学报》2012年第6期38-41,共4页Journal of Wuhan Institute of Technology

基　　金：国家自然科学基金(No.11175137);武汉工程大学科学研究基金(No.11111051)

摘　　要：采用甲烷和氢气作为气源,在直径为50 mm的抛光单晶硅片上,利用新型微波等离子体化学气相沉积(MPCVD)装置制备出金刚石膜.用扫描电子显微镜观测金刚石膜的表面形貌,利用激光Raman光谱表征金刚石膜的质量以及X射线衍射检测金刚石膜的成分和晶界缺陷.结果表明V(CH4)/V(H2)为1%,基片温度为845℃时,生长金刚石膜的质量较好,并且具有完整的晶体形貌,但是扫描电子显微镜图×5 000倍时,观察到金刚石膜中明显的晶体缺陷存在,同时X射线衍射图表明金刚石膜的内应力较大.Diamond films were made by new novel microwave plasma chemical vapor deposition （MPCVD） on mirror polishing silicon plate of diameter 50 mm, methane and hydrogen as gas source. The surface morphology of diamond films was observed by scanning electron microscopy（ SEM）, the quality of diamond films was tested by laser Raman spectroscopic and diamond films composition and grain boundary defects were detected by X - Ray diffraction（XRD）. The results show that diamond films grow quite well and have complete crystal shape when the substrate temperature is 845 ℃ and the rate of V（CH4）/V（H2） is one percent. But SEM images in ×5000 times ,crystal defects existing in diamond films are observed, and the XRD diagram shows high internal stress of diamond films.

关 键 词：金刚石膜 微波等离子体 化学气相沉积 内应力 

分 类 号：O539[理学—等离子体物理]