2～20GHz分布式单片放大器设计  

Design of a 2-20 GHz Distributed Monolithic Amplifier

作　　者：陈兴[1] 朱思成[1] 高学邦[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2012年第8期594-597,共4页Semiconductor Technology

摘　　要：介绍了一种采用0.15μm GaAs PHEMT工艺设计加工的2～20 GHz宽带单片放大器,为了提高电路的整体增益和带宽,在设计电路时采用两级级联分布式结构。此种电路结构不仅能够增加整体电路的增益和带宽,还可以提高电路的反向隔离,获得更低的噪声系数。利用Agilent ADS仿真设计软件对整体电路的原理图和版图进行仿真优化设计。后期电路在中国电子科技集团公司第十三研究所砷化镓工艺线上加工完成。电路性能指标:在2～20 GHz工作频率范围内,小信号增益>13.5 dB;输入输出回波损耗<-9 dB;噪声系数<4.0 dB;P-1>13 dBm。放大器的工作电压5 V,功耗400 mW,芯片面积为3.00 mm×1.6 mm。A 2~20 GHz wide band monolithic amplifier based on 0.15 μm GaAs PHEMT process was described.In order to enhance the gain and bandwidth of the circuit,a cascode distributed configuration was utilized.This configuration not only can enhance the gain and bandwidth,but also can enhance the isolation and recede the circuit′s noise figure.The Agilent ADS software was used to optimize and simulate the circuit.The circuit was fabricated by the 13th research institute of CETC.The measurement results show that the small signal gain is more than 13.5 dB with the band from 2-20 GHz.Input and output return loss（RL）is less than-9 dB.The noise figure is less than 4 dB and the output power at a 1 dB gain compression point（P-1）is more than 13 dBm in the 2-20 GHz band.The power consumption of the amplifier is 400 mW with a supply of 5 V,and the chip area is 3.0 mm×1.6 mm.

关 键 词：宽带 分布式放大器 单片电路 GAAS PHEMT 低噪声 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN722.75