RF LDMOS功率器件关键参数仿真  

Simulation of the Critical Parameters of Power RF LDMOS

作　　者：陈慧蓉[1] 顾爱军[1] 徐政[1] 

机构地区：[1]中国电子科技集团公司第58研究所,江苏无锡214035

出　　处：《电子与封装》2012年第8期33-35,48,共4页Electronics & Packaging

摘　　要：在RF LDMOS功率器件中,击穿电压、截止频率fT和导通电阻Ron是器件的关键参数,为提高这几个器件性能参数可采取的各种措施又往往是相互矛盾和相互制约的。文中研究了几个参数之间的关系和优化方案。现在RF LDMOS功率器件在向高工作电压、高输出功率、高可靠性以及脉冲应用等方向发展。所研制器件采用沟背面源结构,采用场板技术降低栅漏电容,采用多晶硅金属硅化物结构降低栅阻。研制结果表明,在漏源工作电压6V、频率520MHz、连续波的测试条件下,输出功率达到5.6W,增益大于12dB,效率大于55%。Breakdown voltage, cutoff frequency fT and Ron are key parameters of power RF MOS devices. The measures of enhancing these characteristics are usually conflicting and restricting each other. The relation of these parameters are studied and the optimizing schemes are discussed. The development of silicon RF LDMOS power device towards a higher operation voltage, higher output power, higher reliability and a pulse application prospect. By using sinker technology to realize backside source, field plate technology to reduce feedback capacitance, polysilicon and silicide complex structure to reduce gate resistance, the measured results show that the device can deliver 5.6W output power at frequency 520MHz, CW, 6V operate voltage, with more than 12dB power gain and 55% drain efficiency.

关 键 词：RF LDMOS 击穿电压 导通电阻 输出电容 输出功率 

分 类 号：TN386.1[电子电信—物理电子学]