功率VDMOS器件低剂量率辐射损伤效应研究  

Investigation into Low Dose Rate Radiation Damage Effects of Radiation Hardened Power VDMOS Devices

作　　者：高博[1] 刘刚[1] 王立新[1] 韩郑生[1] 张彦飞[1] 宋李梅[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《微电子学》2013年第1期115-119,124,共6页Microelectronics

摘　　要：研究了抗辐射加固功率VDMOS器件在不同偏置条件下的高/低剂量率辐射损伤效应,探讨了阈值电压、击穿电压、导通电阻等电参数在不同剂量率辐照时随累积剂量的变化关系。实验结果表明,此型号抗辐射加固功率VDMOS器件在高/低剂量率辐照后参数的漂移量相差不大,不具有低剂量率辐射损伤增强效应。认为可以用高剂量率辐照后高温退火的方法评估器件的总剂量辐射损伤。实验结果为该型号抗辐射加固功率VDMOS器件在航空、航天等特殊领域的应用提供了技术支持。High and low dose-rate irradiation damage effects of radiation hardened power VDMOS devices for satellite were investigated under different bias conditions. Dependences of typical electrical parameters, such as threshold voltage, breakdown voltage and on-resistance, upon total dose were discussed for different dose rates. Experiments showed that parameters of the radiation hardened power VDMOS device drifted little after irradiation with high and low dose rates, and no low dose-rate radiation damage enhancement effect was observed in device under experiment. High temperature annealing after high dose rate irradiation might be used to evaluate total dose radiation damage of power VDMOS devices. Experimental results provided technical support for application of power VDMOS in aerospace field.

关 键 词：VDMOS 抗辐射加固 总剂量辐射 剂量率辐射 辐射效应 

分 类 号：TN368.1[电子电信—物理电子学]