GaAs PIN二极管大功率毫米波单刀双掷开关单片  

A High Power Millimeter Wave SPDT Switch MMIC Using GaAs PIN Technology

作　　者：蒋东铭[1,2] 陈新宇[1,2] 杨立杰[2] 黄子乾[2] 

机构地区：[1]南京国博电子有限公司,南京210016 [2]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2013年第1期37-41,共5页Research & Progress of SSE

摘　　要：采用76.2mm(3英寸)GaAs PIN二极管工艺设计和制作了大功率毫米波单刀双掷开关单片。采用并联结构的单刀双掷开关以获得较高的功率特性。在片测试表明,在30～36GHz工作频段,开关导通支路插损1.0dB,驻波优于1.5,开关关断端口隔离度大于34dB。开关在导通态下输入功率0.5dB压缩点P-0.5 dB大于5W。A high power millimeter wave single-pole double-through（SPDT） switch MMIC is designed and fabricated using 76.2 mm （3 inch） wafer GaAs PIN technology. By using shunt SPDT switch configuration, high power performance can be obtained. Over the 30 to 36 GHz op- erating bandwidth for on-chip measurement the path in ON state appears less than 1.0 dB inser- tion toss and better than 1.5 VSWR. The path in OFF state appears large than 34 dB isolation. In ON state,the input power for this switch at 0.5 dB compression point is higher than 5 W.

关 键 词：毫米波 砷化镓 PIN二极管 单刀双掷开关 微波单片集成电路 

分 类 号：TN312.4[电子电信—物理电子学]