利用FN振荡电流测量超薄栅MOS结构的栅氧化层厚度  

Thickness Measurements for Ultrathin\|Film Insulator MOS Structure Using Fowler\|Nordheim Tunneling Current Oscillations

作　　者：毛凌锋[1] 谭长华[1] 许铭真[1] 卫建林[1] 

机构地区：[1]北京大学微电子所,北京100871

出　　处：《Journal of Semiconductors》2000年第10期999-1004,共6页半导体学报（英文版）

摘　　要：给出了一种利用 FN振荡电流的极值测量超薄栅 MOS结构的栅氧化层厚度和电子在栅氧化层导带中的有效质量方法 .利用波的干涉方法来处理电子隧穿势垒的过程 ,方便地获得了出现极值时外加电压和栅氧化层厚度、势垒高度、电子的有效质量之间的关系 .这种方法的最大优点是精确和简便 。A method is given for measuring the thickness of gate oxide and the effective electron mass in the conduction band of gate oxide in MOS structure using the extrema of Fowler\|Nordheim tunneling current oscillations. Interference method is introduced to analyze the process of electron tunneling potential barrier. With this method, the relation between the applied voltage, oxide thickness, barrier height and effective electron mass can be obtained very conveniently. The big advantage of this method is accuracy and convenience. And it can be applied easily to the arbitrary potential barrier and well.

关 键 词：MOS结构 栅氧化层厚度 FN振荡电流 超薄栅 

分 类 号：TN407[电子电信—微电子学与固体电子学]