基于圆片级阳极键合封装的高g_n值压阻式微加速度计  

High g_n piezoresistive micro-accelerometer based on wafer level package using anode bonding

作　　者：袁明权[1] 孙远程[1] 张茜梅[1] 武蕊[1] 屈明山[1] 熊艳丽[1] 

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621900

出　　处：《传感器与微系统》2013年第5期111-113,117,共4页Transducer and Microsystem Technologies

基　　金：跨行业装备预先研究项目(51305050301);中国工程物理研究院科学技术发展基金重点资助项目(2011A0403017);中国工程物理研究院科学技术发展基金重点资助项目(2010A0302013)

摘　　要：设计了一种适合于高gn值压阻式微加速度计圆片级封装的结构,解决了芯片制造工艺过程中电极通道建立、焊盘保护、精确划片等关键技术。采用玻璃—硅—玻璃三层阳极键合的方式进行圆片级封装,较好地解决了芯片密封性、小型化和批量化等生产难题。在4 in生产线上制作的高gn值压阻式微加速度计样品,尺寸仅为1 mm×1 mm×0.8 mm;对传感器进行的校准与抗冲击性能测试,结果表明:样品具备105gn的抗冲击能力、0.15μV/gn/V的灵敏度以及200 kHz的谐振频率。A novel wafer level package structure for high gn piezoresistive micro-accelerometer application is presented.Some breakthroughs of a lot of key techniques such as electrons path building,protection of the pad,precise scribing is achieved in chip micro-fabrication process.The glass-Si-glass（GSG） triple stacks anodic bonding technology for the wafer level packaging is an effective way to solve some fabrication problems such as chip sealing performance,miniaturization and mass production.The high gn piezoresistive micro accelerometer prototype is fabricated in the 4 in MEMS production line,which has a very small dimension of 1mm ×1 mm×0.8 mm.The back to back impact test using the standard sensor shows that the piezoresistive micro-accelerometer prototype has anti-impact capability of 105 gn,the sensitivity is 0.151 2 μV/gn/V and the resonance frequency is 200 kHz.

关 键 词：微机电系统 圆片级封装 微加速度计 压阻 阳极键合 

分 类 号：TN623[电子电信—电路与系统]