高深宽比硅基微纳结构制造方法及其应用  

Fabrication Methods and Applications of Silicon Micro/Nanometer Structures with High Aspect Ratio

作　　者：穆继亮[1] 郭茂香[1] 刘冰[1] 陈东红[1] 丑修建[1] 熊继军[1] 

机构地区：[1]中北大学电子与计算机科学技术学院仪器科学与动态测试教育部重点实验室,太原030051

出　　处：《半导体技术》2013年第5期321-327,共7页Semiconductor Technology

基　　金：国家自然科学基金资助项目(51075374)

摘　　要：三维高深宽比硅基结构是基于微纳制造技术的功能载体或执行机构。其由于小尺寸特征而获得特殊的微纳效应,具有灵敏度高、分辨率高、噪声低、位移量小等特点,在光电、生物、微能源和集成互连等技术领域具有广泛应用前景。主要分析了高深宽比硅基微纳结构的种类及特点;系统综述了该结构的制造方法及国内外研究现状;详细描述了不同外形特征结构的应用领域;从工艺标准、建模仿真、批量生产等方面讨论了高深宽比硅基微纳结构制造存在的技术瓶颈问题,并对高深宽比硅基微纳结构的可靠制造与发展趋势进行了展望。Three-dimensional silicon nanometer fabrication technology are used microstructures with high aspect ratio based on micro/ as function carriers or actuators. The microstructures with special micro/nanometer effects because of the microminiaturization are widely applied in the technology fields of photoelectric, biology, micro-power and integrated interconnection due to the high sensitivity, low noise, high resolution and small displacement. The types and features of silicon micro/nanometer structures with high aspect ratio are mainly analyzed. The fabrication method and current situation are systematically summarized from abroad and home. The application fields of different shape structures are described in detail. The technical bottlenecks are discussed from technological standard, modeling, simulation and mass production; The reliable manufacturing and development tendency of silicon micro/ nanometer structures are proposed.

关 键 词：微 纳机电系统 高深宽比 硅微结构 刻蚀技术 应用 

分 类 号：TN303[电子电信—物理电子学]