不同键合温度对低温硅-硅共晶键合的影响  

Effects of Different Bonding Temperatures on the Low Temperature Si-Si Eutectic Bonding

作　　者：陈颖慧[1] 施志贵[1] 郑英彬[1] 隆艳[1] 王旭光[1] 

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621900

出　　处：《微纳电子技术》2013年第9期576-580,共5页Micronanoelectronic Technology

基　　金：中国工程物理研究院超精密加工技术重点实验室课题资助项目(2012CJMZZ00003;2012CJMZZ00006)

摘　　要：选取Ti/Au作为金属过渡层来实现低温硅-硅共晶键合。首先介绍了共晶键合的基本原理,分析了选择金-硅共晶键合的原因,设计了单面溅金、双面溅金以及不同温度下的硅-硅共晶键合实验。采用超声波显微镜对键合样品内部空洞缺陷进行了测试,采用测试设备Dage 4000Plus对键合样品的键合强度性能进行了测试,并对测试结果进行了分析讨论。不同温度测试结果表明,380℃为最佳的金-硅共晶键合温度;单、双面溅金测试结果表明,双面溅金键合工艺优于单面溅金键合工艺。较低温度下实现较高键合强度的硅-硅键合实验表明,金-硅共晶键合的工艺简单、键合温度低,且对工艺环境要求不高。Ti/Au was chosen to serve as the metal transition layer to achieve the low temperature Si-Si eutectic bonding. Firstly, the principle of eutectic bonding was introduced. Then the reason for choosing the Au-Si eutectic bonding was analyzed. Besides that, the single-Au eutectic bon- ding experiment, double-Au eutectic bonding experiment and Si-Si eutectic bonding experiments under different temperatures were designed. The inner inanition of the bonding samples was measured with the ultrasonic microscope. The bonding strength of the samples was measured with the equipment of Dage 4000 Plus, and the test results were analyzed and discussed. The test results of eutectic bonding under different temperatures show that 380 ~C is the best Au-Si eutec- tic bonding temperature. The test results of the single-Au and double-Au eutectic bondings show that the double-Au eutectic bonding is better than the single-Au eutectic bonding. The Si-Si eu- tectic bonding experiment under the low temperature with high bonding strength shows that the Au-Si eutectic bonding has many advantages as the simple process, low bonding temperature and low request for the process environment.

关 键 词：键合 共晶 低温 超声波显微镜 键合强度 键合质量检测 

分 类 号：TN305.96[电子电信—物理电子学]