异质多晶SiGe栅应变Si NMOSFET物理模型研究  

Study on physical model for strained Si MOSFET with hetero-polycrystalline SiGe gate

作　　者：王斌[1] 张鹤鸣[1] 胡辉勇[1] 张玉明[1] 宋建军[1] 周春宇[1] 李妤晨[1] 

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安710071

出　　处：《物理学报》2013年第21期452-459,共8页Acta Physica Sinica

基　　金：模拟集成电路国家重点实验室基金(批准号:P140c090303110c0904);教育部博士点基金(批准号:JY0300122503);中央高校基本业务费(批准号:K5051225014;K5051225004)资助的课题~~

摘　　要：结合了"栅极工程"和"应变工程"二者的优点,异质多晶SiGe栅应变Si MOSFET,通过沿沟道方向使用不同功函数的多晶SiGe材料,在应变的基础上进一步提高了MOSFET的性能.本文结合其结构模型,以应变Si NMOSFET为例,建立了强反型时的准二维表面势模型,并进一步获得了其阈值电压模型以及沟道电流的物理模型.应用MATLAB对该器件模型进行了分析,讨论了异质多晶SiGe栅功函数及栅长度、衬底SiGe中Ge组分等参数对器件阈值电压、沟道电流的影响,获得了最优化的异质栅结构.模型所得结果与仿真结果及相关文献给出的结论一致,证明了该模型的正确性.该研究为异质多晶SiGe栅应变Si MOSFET的设计制造提供了有价值的参考.A new strained Si MOSFET structure with hetero-polycrystalline SiGe gate was studied, which combines the advantages of ＂gate engineering＂ and ＂strain engineering＂. The new structure improved the carrier transport efficiency, suppressed the short-channel effects （SCE）, and enhanced the performance on the basis of strain. Then a physically modeling strategy such as quasi-2D surface potential of strong inversion, threshold voltage, and channel current was presented for the strained Si NMOSFET. Finally, the above model was computed and the results were analyzed.

关 键 词：异质多晶SiGe栅 应变SI NMOSFET 表面势 沟道电流 

分 类 号：TN386[电子电信—物理电子学]