分子束外延生长InGaAs/GaAs异质结及其在独特场效应晶体管中的应用(英文)  

The MBE Growth of InGaAs/GaAs Heterostructures and Its Applications in Special Structure Field Effect Transistor

作　　者：谢自力[1] 邱凯[1] 尹志军[1] 方小华[1] 王向武[1] 陈堂胜[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《电子器件》2000年第4期258-261,共4页Chinese Journal of Electron Devices

摘　　要：用分子束外延技术生长了 In Ga As/Ga As异质结材料 ,并用 HALL效应法和电化学 C- V分布研究其特性。讨论了 In Ga As/Ga As宜质结杨效应晶体管 ( HFET)的优越性。和 Ga As MESFETS或 HEMT相比 ,由于 HFET没有 Al组份 ,具有低温特性好 ,低噪声和高增益等特点。本文研究了具有 In Ga As/Ga As双沟道和独特掺杂分布的低噪声高增益 HFET。The MBE growth technology, Hall effect and electrochemical C V profiles of InGaAs/GaAs heterostructures are investigated. The advantages of InGaAs/GaAs heterostructure field effect transistor (HFET) over GaAs MESFETs or HEMTs are discribed. Aluminium free devices show their advantages, especially in the applications at low temperatures. We have successfully developed a low noise high gain HFET with special doping profile sturcture and InGaAs/GaAs two channels.

关 键 词：场效应晶体管 分子束外延生长 INGAAS/GAAS 异质结 

分 类 号：TN304.054[电子电信—物理电子学] TN386