衬底材料对制备立方氮化硼薄膜的影响  

INFLUENCE OF SUBSTRATES ON THE FORMATION OF c-BN THIN FILMS

作　　者：陈光华[1] 邓金祥[2] 张生俊[1] 宋雪梅[1] 王波[1] 严辉[1] 

机构地区：[1]北京工业大学材料学院,北京100022 [2]北京工业大学应用数理学院,100022

出　　处：《物理学报》2001年第1期83-87,共5页Acta Physica Sinica

基　　金：国家自然科学基金!(批准号 :6 9876 0 0 3 ;198740 0 7);北京市自然科学基金资助的课题&&

摘　　要：较系统地研究了不同衬底材料对制备立方氮化硼薄膜的影响 .用热丝增强射频等离子体CVD法 ,以NH3,B2 H6和H2 为反应气体 ,在Si,Ni,Co和不锈钢等衬底材料上 ,成功生长出高质量的立方氮化硼薄膜 .还用13 5 6MHz的射频溅射系统将c BN薄膜沉积在Si衬底上 ,靶材为h BN(纯度 99 99% ) ,溅射气体为氩气和氮气的混合气体 ,所得到的氮化硼薄膜中立方相含量高于 90 % .用X射线衍射谱和傅里叶变换红外谱对样品进行的分析表明 ,衬底材料与c BN的晶格匹配情况 ,对于CVD生长立方氮化硼薄膜影响很大 ,而对溅射生长立方氮化硼薄膜影响不大 .The influence of substrates on the formation of cubic boron nitride(c-BN) thin films was reported. The c-BN thin films were deposited on different substrates with hot-filament-assisted plasma CVD and RF sputter. In the CVD method, NH3, B2H6 and H-2 were reacting gases, and Si, Ni, Co, stainless steel and other materials were substrates. The experiments showed that the cubic phase content in c-BN thin films was affected by substrates. The film on Ni substrate was the best among all the substrates in the CVD method, and its cubic phase content reached over 80 %. Our study also found that in the CVD method a Ni interlayer on the Si substrate can improve the quality of the c-BN thin films than directly on Si substrate. In the sputter method, the working gas was N-2 and Ar, hot-pressed hexagonal boron nitride (h-BN) of 4N purity was used as sputtering target, the c-BN thin film with over 90 % content of cubic phase was successively deposited on Si substrate. In our research,the boron nitride thin films were characterized by Fourier Transform Infrared (FTIR) Spectra and X-ray diffraction. Finally we concluded that for CVD method the cubic phase content and adhesion are highly affected by the crystal lattice mismatch between c-BN and substrate materials;however, for sputter method the crystal lattice mismatch between c-BN and substrate materials little affects the quality of c-BN thin films.

关 键 词：立方氮化硼薄膜 衬底 热丝CVD 射频溅射 

分 类 号：TN304[电子电信—物理电子学]