InP基PIN型探测器中接触层掺杂对In_(0.53)Ga_(0.47)As材料光致发光特性的影响  

The Influences of Contact Layer Doping on the PL Spectrum Properties of In_(0.53)Ga_(0.47) As Materials in InP Base PIN Detector

作　　者：吴波[1] 邓军[1] 杨利鹏[1] 田迎[1] 韩军[1] 李建军[1] 史衍丽[2] 

机构地区：[1]北京工业大学电子信息与控制工程控学院光电子技术省部共建教育部重点实验室,北京100124 [2]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2014年第5期415-418,共4页Infrared Technology

基　　金：国家自然科学基金;编号:U1037602

摘　　要：利用MOCVD在InP衬底上制备InP/In0.53Ga0.47As/InP双异质结PIN型材料,通过对本征层In0.53Ga0.47As材料的光致荧光谱研究,发现PIN结构中两侧InP材料的掺杂特性对中间In0.53Ga0.47As材料的光致发光特性有明显的影响。本文通过对两侧InP材料的变掺杂处理,实现了In0.53Ga0.47As材料光致发光特性的有效提高。InP/In0.53Ga0.47As/InP double heterojunction were grown by metalorganic chemical vapor deposition on InP substrate.Based on the intrinsic layer of In0.53Ga0.47As material photoluminescence spectrum measurement,that can be observed the doping characteristics of the InP layer in PIN structure had a significant impact on the PL spectrum properties of In0.53Ga0.47As layer.In this paper,the varied doping methods on both sides of the InP layer were suggested to improve the PL spectrum properties of In0.53Ga0.47As layer effectively.

关 键 词：INP 变掺杂 MOCVD INGAAS 

分 类 号：TN304.054[电子电信—物理电子学]