基于正交试验的芯片堆叠封装引线键合工艺研究  

Research of wire bonding technology in a stacked die package based on orthogonal test

作　　者：唐宇[1,2] 张鹏飞[1] 吴志中[1] 黄杰豪 李国元[1] 

机构地区：[1]华南理工大学电子与信息学院,广东广州510640 [2]仲恺农业工程学院自动化学院,广东广州510225

出　　处：《电子元件与材料》2014年第7期75-79,共5页Electronic Components And Materials

基　　金：中央高校基本科研业务费专项资金资助项目(No.2014ZB0032);广东省科技计划资助项目(No.2012B020313004);广东高校优秀青年创新人才培养计划资助项目(No.LYM11077);中国博士后科学基金面上资助项目(No.2014M552193)

摘　　要：选取0.203 2 mm(8 mil)金线采用热压超声键合工艺进行烧球、拉力和线尾等一系列正交试验,分析各个键合参数对键合质量的影响。研究结果表明,最优的引线键合工艺窗口为键合温度180℃或190℃、键合功率35 mW、键合时间15 ms或20 ms、键合压力0.12 N、烧球电流3 200 mA、烧球时间350μs和尾丝长度20μm。在影响键合质量的各因素中,键合功率和键合压力对键合质量的影响显著,过大的键合功率会引起键合区被破坏,键合强度降低,过小的键合功率因能量不足会引起欠键合,键合强度降低。过大的键合压力会引起键合球变形而导致键合强度降低,过小的键合压力因欠键合而导致键合强度降低。0.203 2 mm（8 mil） Au wire was used as the bonding wire,series of orthogonal tests such as the ball formation, the pull test, and the wire tail test were performed by ultrasonic thermo compression bonding process. The effects of wire bonding parameters on the bonding qualities were systematically analyzed. Results show that the optimized process parameter windows are bonding temperature is 180 ℃ or 190 ℃, bonding power is 35 mW, bonding time is 15 ms or 20 ms, bonding pressure is 0.12 N, electronic flame off current is 3 200 mA, electronic flame off time is 350 μs and tail wire length is 20 μm. In various factors affecting the wire bonding quality, bonding power and bonding pressure have a significant influence on bonding qualities. Results show that the bonding areas could be damaged by too high bonding power and the wire bonding strength reduces. Defective bonding could be caused by too small bonding power. The bonding ball deformation could be caused by too large bonding pressure and the bonding strength is also reduced by too small bonding pressure.

关 键 词：引线键合 键合功率 键合压力 系统级封装 正交试验 失效机理 

分 类 号：TN305[电子电信—物理电子学]