UHV/CVD硅锗膜的Raman光谱分析  

Raman Analysis of SiGe Films Grown by UHV/CVD

作　　者：朱培喻[1] 陈培毅[1] 黎晨[1] 罗广礼[1] 贾宏勇[1] 刘志农[1] 钱佩信[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《光谱学与光谱分析》2001年第4期464-467,共4页Spectroscopy and Spectral Analysis

基　　金：国家九五重点科技项目 (攻关 )计划课题 :97 760 0 3 0 1 ;国家自然科学基金重点项目 :698360 2 0

摘　　要：本文提出一种用Raman光谱测量SiGe合金膜中的锗组分及应变的方法 ,方法是非破坏的。并用这一方法测量了几种不同锗组分和膜厚度的SiGe合金样品 ,它们都是用UHV/CVD设备生长的。其中两个样品还与X 射线双晶衍射的结果作了比较 ,两种方法的结果十分一致 ,这说明本文提出的方法是准确可靠的。这些样品用于制作SiGe/Si异质结PMOSFET ,对 0 5 μm沟长器件 ,跨导达 112ms·mm-1。This paper presents a Raman method, which is no deconstructed, to measure Ge content and strain in SiGe alloy films and some samples, which is grown by UHV/CVD with different Ge content and thickness, have been tested by above method. Two samples among them were measured by DCXRD, the results tested by DCXRD are consistent with Raman results that proves that the method in this paper is reliable and accurate. The SiGe PHMOSFET has been fabricated by the samples, the transconductance reachs 112 ms(.)mm(-1) for the device with 0.5 mum channel.

关 键 词：Raman SIGE合金 UHV/CVD 弛豫 应变 硅锗膜 拉曼光谱分析 半导体薄膜 

分 类 号：TN304.055[电子电信—物理电子学] TN304.2