磁控溅射淀积掺Er富Si氧化硅膜中Er^(3+) 1.54μm光致发光  

ROOM-TEMPERATURE 1.54μm Er^(3+) PHOTOLUMINESCENCE FROM Er-DOPED SILICON-RICH SILICON OXIDE FILM GROWN BY MAGNETRON SPUTTERING

作　　者：袁放成[1] 冉广照[1] 陈源[1] 张伯蕊[1] 乔永平[1] 傅济时[1] 秦国刚[1] 马振昌[2] 宗婉华[2] 

机构地区：[1]北京大学物理系 [2]信息产业部电子第十三研究所,石家庄050051

出　　处：《物理学报》2001年第12期2487-2491,共5页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :5 983 2 10 0 );集成光电子国家重点实验室基金资助的课题~~

摘　　要：用磁控溅射淀积不同富Si程度的掺Er富Si氧化硅薄膜 .室温下测量其光致发光谱 ,观察到各谱中都含有 1.5 4和 1.38μm两个发光峰 ,其中 1.5 4和 1.38μm的光致发光峰分别来自Er3+ 和氧化硅中某种缺陷 .系统研究了Er3+ 1.5 4μm光致发光峰强度对富Si程度及退火温度的依赖关系 .还发现 1.5 4μm发光峰强度与 1.38μm发光峰强度相互关联 。Room temperature photoluminescence (PL) has been observed from Er doped silicon rich silicon oxide films grown by magnetron sputtering. For all kinds of silicon rich silicon oxide films grown with different excess Si contents, each PL spectrum has two peaks at 1.54 and 1.38μm, which originate from Er 3+ and a certain kind of defects, respectively, in the silicon rich silicon oxide. It was found that 1.54 and 1.38μm PL peak intensities are correlated with each other. The PL intensity-dependence on the excess-Si content and annealing temperature was studied in detail.

关 键 词：ER 富Si氧化硅 光致发光 纳米硅 薄膜 铒 富硅氧化硅 磁控溅射 

分 类 号：O484.41[理学—固体物理] TN304.105.5[理学—物理]