低剂量率下MOS器件的辐照效应  

Radiation Effects of MOS Devices at Low Dose Rate

作　　者：刘传洋[1] 张廷庆[1] 刘家璐[1] 王剑屏[1] 黄智[1] 徐娜军[2] 何宝平[2] 彭宏论[2] 姚育娟[2] 王宝成 

机构地区：[1]西安电子科技大学微电子所,陕西西安710071 [2]西北核技术研究所,陕西西安710024 [3]昆仑机械厂,陕西西安710065

出　　处：《微电子学》2002年第1期29-33,共5页Microelectronics

摘　　要：对 MOS器件在低剂量率 γ射线辐射条件下的偏置效应进行了研究。对不同偏置及退火条件下 MOS器件辐照后的阈值电压漂移进行了对比。结果表明 ,偏置在 MOS器件栅氧化层内产生电场 ,增强了辐照产生电子 -空穴对的分离 ,同时 ,影响了正电荷 (包括空穴和氢离子 )的运动状态 ;此外 ,偏置对退火同样有促进作用。Effects of irradiation dose rates and irradiation bias are investigated for MOS devices under γ-rays. Threshold voltage shift is compared after the MOS device is irradiated under different irradiation temperature, gate bias and annealing conditions. The electric field in gate oxide due to gate bias not only accelerates the separation of electron-hole, but also influences the movement of positive charges,including hole and H +.In addition,the gate bias is helpful for improving annealing.

关 键 词：MOS器件 辐照效应 阈值电压漂移 低剂量率 

分 类 号：TN432[电子电信—微电子学与固体电子学]