硅基PZT薄膜的制备与刻蚀工艺研究  

Study of Fabrication and Etching Processes of PZT Thin Films on Silicon

作　　者：赵宏锦[1] 刘建设[1] 任天令[1] 刘燕翔[1] 刘理天[1] 李志坚[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《压电与声光》2001年第4期290-292,共3页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目 ( 6980 60 0 7) ;国家"九七三"计划资助项目 ( G19990 3310 5 )

摘　　要：采用溶胶 -凝胶 ( Sol- Gel)法制备了 PZT薄膜 ,在 60 0°C的退火温度下即获得了晶化完善的钙钛矿铁电相结构。采用典型的半导体光刻工艺 ,利用 HCl/ HF刻蚀溶液成功地获得刻蚀线条分辨率达微米量级的 PZT薄膜微图形。较好的解决了有关 PZT薄膜制备与加工中存在的关键问题 ,为硅基铁电薄膜器件的实现奠定了良好的工艺基础。Lead-zirconate-titanate (PZT) thin films on silicon were prepared by a Sol-Gel methodIt was shown that the PZT thin films had perfect perovskite ferroelectric structure at annealing temperature of 600 °C by X-ray diffraction analysis (XRD)PZT thin films were chemically etched using HCl/HF solution after typical semiconductor lithographic processThe SEM results indicated that the PZT etching problem was well resolved for the application of PZT thin film devices

关 键 词：锆钛酸铅 刻蚀工艺 PZT薄膜 硅基 

分 类 号：TN304.055[电子电信—物理电子学]