界面态电荷对6H碳化硅N沟MOSFET阈值电压和跨导的影响  

Analysis of the effect of interface state charges on threshold voltage and transconductance of 6H-SiC N-channel MOSFET

作　　者：汤晓燕[1] 张义门[1] 张玉明[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《物理学报》2002年第4期771-775,共5页Acta Physica Sinica

基　　金：国防科技预研基金项目 (批准号 :OOJ11 2 1 DZ0 1)~~

摘　　要：针对界面态密度在禁带中的不均匀分布 ,并且考虑到碳化硅材料中杂质的不完全离化 ,分析了界面态电荷对N沟 6H碳化硅MOSFET阈值电压和跨导的影响 .结果显示界面态密度的不均匀分布不仅使阈值电压增大 ,而且还会导致器件跨导变低 。The effect of interface state charges on the threshold voltage and transconductance of 6H-SiC N-channel metal-oxide semiconductor field-effact transistor (MOSFET) is analyzed based on the nonuniformly distributed interface state density in the band gap and incomplete impurity ionization in silicon carbide. The results show that the nonuniform distribution of interface state density causes not only the increment of the threshold voltage but also the degradation of the transconductance of MOSFET so that it is one of the important factors to influence the characteristics of SiC MOSFET.

关 键 词：碳化硅 界面态电荷 阈值电压 跨导 界面态密度 MOS器件 金属-氧化物-半导体场效应器件 

分 类 号：O472.1[理学—半导体物理]