用SU-8胶制高深宽比微结构的试验研究  

Experimental Research on High Aspect Ratio Microstructure by SU-8 Resist

作　　者：刘景全[1] 朱军[1] 丁桂甫[1] 赵小林[1] 蔡炳初[1] 

机构地区：[1]上海交通大学微纳米科学技术研究院薄膜与微细技术教育部重点实验室,上海200030

出　　处：《微细加工技术》2002年第1期27-29,44,共4页Microfabrication Technology

基　　金：中国博士后基金资助

摘　　要：SU 8胶是一种负性、环氧树脂型、近紫外线光刻胶 ,它适于超厚、高深宽比的MEMS微结构制造。但SU 8胶对工艺参数很敏感。采用正交试验设计方法对其工艺进行分析。采用三个因素进行试验 ,对试验进行了分析。以 2 0 0 μm厚的SU 8为例进行试验研究 ,得到的光刻胶图形侧壁陡直 ,分辨率高 ,与基底附着性强 ,深宽比大于 2 0。SU 8 is a negative, epoxy type, near UV photoresist. The resist has been specifically applied for ultrathick, high aspect ratio MEMS type applications. This photoresist is very sensitive to the process parameters .In this paper, the orthogonal method is used in the process. Using three processing parameters as control factors, experiments are performed and results are evaluated. The output structure has straight sidewall profile, fine line and space resolution, and strong adhesion to substrate. The aspect ratio can be greater than 20 in the 200 μm thick resist. Furthermore, several metallic films are used as the substrates.

关 键 词：微结构 试验研究 SU-8胶 高深宽比 微机电系统 光刻 

分 类 号：TN305.7[电子电信—物理电子学]