用于T形栅光刻的新型移相掩模技术  

Novel PSM technology for T-shaped gate lithography

作　　者：韩安云[1] 王育中[1] 王维军[1] 张 倩[1] 田振文[1] 樊照田[1] 陈宝钦[2] 崔 铮 

机构地区：[1]信息产业部电子第十三研究所,河北石家庄050051 [2]中国科学院微电子中心,北京100083 [3]英国卢瑟福国家实验室微结构研究中心

出　　处：《微纳电子技术》2002年第5期37-40,共4页Micronanoelectronic Technology

摘　　要：根据移相掩模基本原理,通过光刻工艺模拟提出了一种适于T形栅光刻的新型移相掩模技术——M-PEL。初步实验证明,M-PEL技术可在单层厚胶上经一次光刻形成理想的T形栅抗蚀剂形貌。The paper suggests a novel PSM technology called M-PEL for producing resist patterns required by fabricating T-shaped gate. It is based on fundamentals of phase shift mask (PSM) and aided by lithography process simulation. The initial experiments show that a unique resist pat-tern required by fabricating T-shaped gate can be formed by one lithography process in single layer photoresist.

关 键 词：光学光刻 移相掩模 T形栅 M-PEL 

分 类 号：TN305.7[电子电信—物理电子学]