等离子体增强MOCVD法生长ZnO薄膜  

Growth of ZnO Film by Plasma-assisted MOCVD

作　　者：王新强[1] 杨树人[1] 王金忠[1] 李献杰[1] 殷景志[1] 姜秀英[1] 杜国同[1] 杨如森[2] 高春晓[2] Ong H.C. 

机构地区：[1]吉林大学电子科学与工程学院集成光电子学国家重点实验室吉林大学实验区,长春130023 [2]吉林大学超硬国家重点实验室,长春130023 [3]香港城市大学电子工程系

出　　处：《高等学校化学学报》2002年第5期927-931,共5页Chemical Journal of Chinese Universities

基　　金：基金项目:国家自然科学基金(批准号:60177007;60176026); 国家自然科学基金委员会和香港资助局联合资助项目(批准号:59910161983);国家863项目;吉林省科技厅资助项目(批准号:19990518-1)和集成光电子国家重点实验室开放课题等资助.

摘　　要：利用等离子体增强MOCVD法生长出 ZnO薄膜，用X射线衍射谱观察到位于 2θ34．56°处（0002）的衍射峰，表明ZnO沿c方向呈柱状生长．通过荧光光谱，观察到来自于激子的高强度的近带边紫外光发射（375um）．紫外发射光强度与深能级复合发射光强度比高达 193，显示出材料的高质量，并通过原子力显微镜加以验证．为了实现高阻ZnO薄膜，利用高温富氧分段退火和用N2 气进行掺氮两种方法生长高阻ZnO薄膜．结果表明，电阻率由0．65 Ω·cm分别升高到1100 Ω·cm（分段退火）和5×104Ω·cm（掺氮）．进一步比较发现，掺氮的样品不仅电阻率高，而且光荧光特性好，显示出更高的薄膜质量．Abstract The growth of ZnO film by plasma-assisted MOCVD was reported in this atricle. From X-ray diffraction spectrum, the intensity of (0002) peak at 2 =34. 56?was high, indicating a c-axis orientation perpendicular to the substrate surface in ZnO. Ultraviolet(UV) emission with a high intensity at 375 nm was attributed to the excitation emission from photoluminescence (PL) spectrum. In PL spectrum, we also found green emission with a low intensity and wide FWHM. This green emission came from deep level transition due to defect levels in ZnO film. The ratio of the intensity of UV emission to that of green emission was as high as 193, indicating a high quality of the samples. This high quality was also confirmed by Atomic Force Microscope (AFM) analysis. Two methods were used in order to get ZnO film with a high resistivity. One was annealing ZnO film every ten minutes under relative high pressure of oxygen (O2) at 700 , the other was N-doping by N2. ZnO film with a high resistivity was successfully prepared. The resistivity was 5 104 ?cm and 1 100 ?cm, respectively, while that of untreated sample was as low as 0. 65 ?cm. Furthermore, N-doped sample had a higher resistivity and better photoluminescence properties than that of the sample obtained by annealing under oxygen.

关 键 词：等离子体增强 MOCVD法 ZNO薄膜 原子力显微镜 光谱 半导体薄膜 生长方法 

分 类 号：TN304.21[电子电信—物理电子学] TN304.055