真空退火对氟化非晶碳薄膜结构的影响  

The influence of annealing in vacuum on the structuresof a-C:F thin films

作　　者：黄峰[1] 程珊华[1] 宁兆元[1] 杨慎东[1] 叶超[1] 

机构地区：[1]苏州大学物理系,苏州215006

出　　处：《物理学报》2002年第6期1383-1387,共5页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :10 175 0 48)资助的课题~~

摘　　要：在苯 (C6H6)和四氟化碳 (CF4)混合气体中 ,用微波电子回旋共振等离子体化学气相沉积技术 (ECR CVD)在不同功率下制备了氟化非晶碳膜 (a C :F) ,为了检测膜的热稳定性对其进行了真空退火处理 ,测量了退火前后膜厚的变化率 ,并用傅里叶变换红外吸收光谱 (FTIR)研究了其结构的变化 .结果表明 ,膜厚变化率与沉积功率有关 ;40 0℃退火后低功率下沉积的膜的结构变化显著 ,高功率下沉积的膜则呈现了较好的热稳定性 .a-C:F films were deposited by electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) using CF-4 and C-6H-6 as source gases. In order to investigate the thermal stability, the films have been annealed in vacuum at several temperatures. The film thicknesses before and after annealing were measured, and the structures were analyzed using Fourier-transformed infrared spectrometer(FTIR) spectra. It shows that after annealing the films become thinner and the structures of the films deposited at lower microwave powers have more changes than ones of the films deposited at higher microwave powers. It means that the films prepared at higher microwave powers have better thermal stability.

关 键 词：氟化非晶碳薄膜 结构 ECR-CVD a-C:F薄膜 真空退火 超大规模集成电路 

分 类 号：O484.1[理学—固体物理] TN47[理学—物理]