无显影气相光刻(DFVP)研究的进展  

Progress in Development-free Vapor Photolithography

作　　者：洪啸吟[1] 李钟哲[1] 刘丹[1] 吴兵[1] 卢建平[1] 段生权[1] 陈明[1] 王培清[1] 

机构地区：[1]清华大学化学系,北京100084

出　　处：《高分子通报》2002年第3期1-4,18,共5页Polymer Bulletin

基　　金：国家自然科学基金委的资助 (2 0 0 740 2 1 ;5 963 3 1 1 0 ;5 9473 0 3 1等 ) ;北京市自然科学基金委以及其他单位的支持

摘　　要：无显影气相光刻技术是我国在 1980年发明的一种独特的光刻技术 ,具有不需要显影 ,分辨率高等优点。但它的机理并不清楚。本文介绍十多年来在无显影气相光刻机理研究方面的成果。实验证明 ,无显影气相光刻是以光致光刻胶膜内的诱蚀剂浓度差为基础的方法 ;而传统的光刻方法是基于光致光刻胶膜溶解度差的方法。由于两者的光刻原理不同 ,导致了他们间光刻效果和应用范围之区别。所得机理研究之结果可以解释无显影气相光刻中的各种独特的现象并可指导无显影气相光刻技术的发展 。Development\|free vapor Photolithography,which was discovered in 1980,is a very unique technology,however,its mechanism was not clearly understood.A serious of researches on mechanism was carried out by Xiaoyin Hong et al.In this paper the results of the mechanism researches are given.It was proved that the DFVP is based on the photo\|induced difference of concentration of etching accelerators in the polymer film,while the traditional photolithography is base on photo\|induced difference of solubility of the polymer film.Based on the proposed mechanism some phenomenon involved in DFVC are explained and some improvements have been made.

关 键 词：无显影气相光刻 光刻胶 二氧化硅 氢氟酸 诱蚀剂 诱蚀机理 刻蚀反应 分辨率 

分 类 号：TN305.7[电子电信—物理电子学]