通过改变费米能级钉扎效应制备6H-SiC欧姆接触的特性研究  

Study of the Characteristics of Ohmic Contacts to 6H-SiC by Changing Fermi Level Pinning

作　　者：洪根深[1] 廖勇明[1] 廖伟[1] 丁元力[1] 邬瑞彬[1] 刘洪军[1] 龚敏[1] 

机构地区：[1]四川大学物理系,成都610064

出　　处：《四川大学学报（自然科学版）》2002年第3期492-494,共3页Journal of Sichuan University(Natural Science Edition)

摘　　要：作者通过氧化、刻蚀和沸水处理的方法 ,在n型 6H SiC的C面上制备了线性较好的欧姆接触 .作者对C面和Si面的欧姆接触的退火特性进行了比较和研究 ;并对形成欧姆接触的物理机理进行了讨论 ,研究了这种欧姆接触在大密度电流下的特性 .Al/n 6H SiC Ohmic contacts on C face have been obtained by the treatments of oxidation,HF etching and immersing in boiling water. The annealing characteristics of Ohmic contacts for Al on C or Si face n 6H SiC were studied. The physical mechanisms were also discussed. The characteristics of Ohmic contacts under large current concentration were studied at the same time.

关 键 词：6H-SIC 费米能级钉扎 欧姆接触 

分 类 号：O472[理学—半导体物理]