宽带隙半导体材料SiC研究进展及其应用  

PROGRESS IN RESEARCH ON WIDE BAND-GAP SEMICONDUCTOR SiC AND ITS APPLICATION

作　　者：王玉霞[1] 何海平[1] 汤洪高[1] 

机构地区：[1]中国科学技术大学材料科学与工程系,合肥230026

出　　处：《硅酸盐学报》2002年第3期372-381,共10页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金资助项目 (批准号 :5 0 172 0 44 ) .

摘　　要：SiC是第 3代宽带隙半导体的核心材料之一 ,具有极为优良的物理化学性能 ,应用前景十分广阔 .本文综合介绍SiC的基本特性 ,材料的生长技术 (包括体单晶生长和薄膜外延生长技术 ) ,SiC基器件的研发现状 ,应用领域及发展前景 .同时还介绍了作者用脉冲激光淀积法在Si衬底上制备出单晶 4HDue to its excellent physical and chemical properties, SiC has been regarded as a key material for the third_generation semiconductors with extensive potential applications. In this paper, SiC properties, techniques for SiC bulk and film growth, current status of research on SiC_based device, and applications and prospect of SiC materials are reviewed. The aothors' results of growing single_crystalline 4H-SiC film on Si substrate by pulsed laser deposition are also described.

关 键 词：宽带隙半导体材料 SIC 应用 碳化硅 体单晶生长 薄膜 半导体器件 

分 类 号：TN304.24[电子电信—物理电子学]