高效率GaAs/InGaAsHFET功率放大器  

High Efficiency GaAs/InGaAs HFET Power Amplifier

作　　者：陈堂胜[1] 杨立杰[1] 王泉慧[1] 李拂晓[1] 陈效建[1] 

机构地区：[1]南京电子器件研究所,210016

出　　处：《固体电子学研究与进展》2002年第2期231-234,共4页Research & Progress of SSE

摘　　要：研制成 Ga As/ In Ga As异质结功率 FET(HFET) ,该器件是在常规的高 -低 -高分布 Ga As MESFET的基础上 ,在有源层的尾部引入 i-In Ga As层。采用 HFET研制的两级 C波功率放大器 ,在 5 .0～ 5 .5 GHz带内 ,当Vds=5 .5 V时 ,输出功率大于 3 2 .3 1 d Bm(0 .1 77W/ mm ) ,功率增益大于 1 9.3 d B,功率附加效率 (PAE)大于3 8.7% ,PAE最大达到 49.4% ,该放大器在 Vds=9.0 V时 ,输出功率大于 3 6.65 d Bm(0 .48W/ mm) ,功率增益大于 2 1 .6d B,PAE典型值 3 5 %The developed GaAs/InGaAs heterojunction power FET(HFET) is reported in this paper. Based on the conventional Hi Lo Hi profile GaAs MESFET, this device incorporates an i InGaAs layer into the tail of the active layer. At V ds =5.5 V, C band two stage power amplifier developed with the HFETs has delivered more than 32.31 dBm (0.177 W/mm) output power with power gain of more than 19.3 dB and power added efficiency ( PAE ) of more than 38.7% across the band of 5.0～5.5 GHz. The maximum PAE reaches 49.4%. The output power of the power amplifier at V ds =9.0 V is greater than 36.65 dBm (0.48 W/mm) with power gain greater than 21.6 dB and typical PAE of 35% across the same band.

关 键 词：HFET 功率放大器 高效率 异质结 微波场效应晶体管 单片微流集成电路 砷化镓 铟镓砷 

分 类 号：TN722.75[电子电信—电路与系统]