特高压晶闸管p^-层穿通和p^+层发射极结构设计  

Design of p^- Layer Punch-Through and p^+ Emitter Structure for Ultra High Voltage Thyristor

作　　者：高山城[1] 罗艳红[1] 张婷婷[1] 赵卫[1] 高飞[1] 李翀[1] 

机构地区：[1]西安电力电子技术研究所,西安710061

出　　处：《半导体技术》2014年第10期752-757,共6页Semiconductor Technology

基　　金：国家科技支撑计划(2006BAA02A26)

摘　　要：基于传统晶闸管单扩散p层杂质浓度分布很难协调阻断电压、通流能力、通态压降、反向恢复电荷和关断时间之间的矛盾,无法使特高压晶闸管的通流能力由4 000 A提高到4 500 A。对特高压晶闸管采用低浓度p-层穿透、高浓度p+层发射极结构设计进行了理论分析并进行了工艺实验,测试结果表明,特高压晶闸管在不损失阻断电压(≥8 500 V)前提下,芯片厚度减薄0.05 mm、通态压降下降0.11 V,反向恢复电荷、dV/dt耐量、di/dt耐量、关断时间等得到优化,研制了6英寸(1英寸=2.54 cm)4 500 A/8 500 V特高压晶闸管,并成功应用于±800 kV/7 200 MW特高压直流输电工程中。The impurity concentration distribution of single diffusion p layer based on the traditional thyristor is difficult to coordinate the contradictions of blocking voltage,current capacity,reverse recovery charge and turn-off time. It can not make the current capacity of the ultra-high voltage thyristor improve from 4 000 A to 4 500 A. The low concentration ultra high voltage thyristor with p-layer punchthrough and high p＋emitter structure was designed and processed. The results indicate that the chip thickness decreases 0. 05 mm and on-state voltage drops 0. 11 V without losing blocking voltage（ ≥ 8 500 V） of the ultra-high voltage thyristor. Also the reverse recovery charge,dV/dt tolerance,di /dt tolerance and turn-off time are optimized. A 6 inches 4 500 A /8 500 V ultra-high voltage thyristor was developed and successfully applied to the ± 800 kV /7 200 MW ultra-high voltage direct current（ UHVDC） transmission project

关 键 词：阻断电压 通流能力 通态压降 反向恢复电荷 关断时间 

分 类 号：TN34[电子电信—物理电子学]