快速恢复外延二极管用硅外延片的工艺研究  

The Research of the Process on the Silicon Epitaxial Wafers Used for the Fast Recovery Epitaxial Diodes

作　　者：王文林[1] 李扬[1] 陈涛[1] 李明达[1] 

机构地区：[1]中国电子科技集团公司第46研究所,天津300220

出　　处：《电子与封装》2014年第11期37-40,共4页Electronics & Packaging

摘　　要：利用化学气相沉积方法制备所需硅外延层,通过FTIR(傅里叶变换红外线光谱分析)、C-V(电容-电压测试)、SRP(扩展电阻技术)等多种测试方法获取外延层的几何参数、电学参数以及过渡区形貌。详细研究了本征层生长工艺与外延层厚度分布、电阻率分布以及过渡区形貌之间的对应关系。采用该优化设计的硅外延材料,成功提高了FRED器件的性能与成品率。Using the method of chemical vapor deposition（CVD）, the required silicon epitaxial layer was prepared, and the geometry parameter, the electricity parameter as well as the transition region morphology was analyzed by using some testing methods such as FTIR（Fourier-Transform Infrared Spectrophotometry）,C-V, SRP（spreading resistance profile）and so on. The relationship between the intrinsic layer growth process and the thickness distribution, resistivity distribution as well as transition topography of epitaxial layer was studied in detail. With the optimized design of silicon epitaxial material in the paper, the performance and yield of FRED were successfully improved.

关 键 词：快恢复二极管 硅外延片 本征层生长 过渡区 

分 类 号：TN304[电子电信—物理电子学]