用MOCVD方法生长940 nm应变多量子阱发光二极管  

MOCVD Growth of 940 nm Strained Multi-quantum Well Light Emitting Diodes

作　　者：于永芹[1] 黄柏标[1] 周海龙[1] 魏吉勇[1] 潘教青[1] 岳金顺 李树强 陈文斓[1] 齐云[1] 秦晓燕[1] 张晓阳[1] 王笃祥 任忠祥 

机构地区：[1]山东大学晶体材料国家重点实验室,山东济南250100 [2]山东华光光电子有限公司,山东济南250101

出　　处：《光电子．激光》2002年第7期682-684,共3页Journal of Optoelectronics·Laser

摘　　要：采用金属有机物化学气相淀积 (MOCVD)方法设计并生长了应变多量子阱 In Ga As/Al Ga As,并且对其进行了光致发光 (PL)谱、双晶 X射线衍射 (DXRD)谱和电化学 C- V等的测试。然后以 In Ga As/Al-Ga As作为有源层 ,以 Ga As衬底作为透明衬底 ,p面金属电极 Au Be合金作为镜面反射层 ,采用倒装技术制备了近红外发光二极管 (L ED)。在输入电流为 2 0 m A下的正向电压为 1.2 V左右 ,电致发光谱的峰值波长为 938nm,10 μA下的反向击穿电压为 5～ 6 V,在输入电流为 5 0 m A下得到输出功率 3.5m W,对应电压为 1.3V,在输入电流为 30 0 m A时得到最大输出功率为 12 m W。InGaAs/AlGaAs multi-quantum wells grown by MOCVD were used as the active layer of near infrared LED, PL and DXRD spectra were applied to investigate the ability of epitaxial layers; the doping concentrations of the cladding layers and cap layer were measured by electrochemistry C-V. The single LED chip was put down on the heatsink by p-side down, using GaAs transparent substrate and AuBe alloy mirror reflector. The positive voltage at the current of 20 mA was 1.2 V and the electroluminescent (EL) peak wavelength was 938 nm. And the reverse voltage at 10 μA was 5-6 V. The output power at the current of 50 mA was 3.5 mW corresponding to 1.3 V. And the maximum output power of 12 mW was obtained at the current of 300 mA.

关 键 词：发光二极管 LED 应变多量子阱 金属有机物化学气相淀积 MOCVD 倒装技术 

分 类 号：TN312.8[电子电信—物理电子学]