VDMOS器件动态特性研究  

Study on Dynamic Performance of VDMOS Device

作　　者：郑莹[1] 姜立娟[1] 

机构地区：[1]中国电子科技集团公司第四十七研究所,沈阳110032

出　　处：《微处理机》2016年第2期14-16,共3页Microprocessors

摘　　要：VDMOS器件具有开关速度快、开关损耗小、频率特性好等优点,被广泛应用于高频开关器件领域。利用TCAD软件对VDMOS器件进行建模仿真,研究了元胞P阱间氧化层厚度对器件静态参数和动态参数的影响。结果表明,器件的阈值电压不变,器件的导通电阻随着元胞P阱间氧化层厚度的增加而增加,器件的栅电荷随着元胞P阱间氧化层厚度的增加而减小,二者相互矛盾,但器件功耗优值明显提高。同时采取JFET注入技术降低导通电阻,使得器件的动态性能进一步改善,对高频VDMOS器件的应用具有一定的指导意义。The VDMOS device has advantages of high switching speed,small switching loss and high working frequency,etc.,which is widely applied in high frequency switching devices. In this paper,VDMOS device is simulated by TCAD software and the effect on static and dynamic parameters of oxide thickness between P well in VDMOS cell is studied. The results show that threshold voltage is constant and on- state resistance changes with oxide thickness and Gate electric charge of VDMOS is being in diametrical opposition,but the figure of merit is obviously increased. At the same time,JFET technology is used to reduce on- state resistance to improve dynamic performance of VDMOS device which can perform guidance for high frequency VDMOS device.

关 键 词：VDMOS器件 动态特性 氧化层 阈值电压 导通电阻 栅电荷 

分 类 号：TN4[电子电信—微电子学与固体电子学]