检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:洪姣[1,2] 牛新环[1,2] 刘玉岭[1,2] 王辰伟[1,2] 王如[1,2] 孙鸣[1,2] 高宝红[1,2] 岳昕[1,2] 李祥州[1,2] 李月[1,2]
机构地区:[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130
出 处:《微纳电子技术》2016年第8期558-562,共5页Micronanoelectronic Technology
基 金:国家中长期科技发展规划02科技重大专项资助项目(2016ZX02301003-004-007);国家自然科学基金资助项目(61504037);河北省教育厅资助科研项目(QN2014208);河北省自然科学基金资助项目(E2013202247);河北省自然科学基金青年基金资助项目(F2015202267);河北工业大学优秀青年科技创新基金资助项目(2015007)
摘 要:主要研究了低磨料质量分数阻挡层抛光液的抛光性能,并将其与商用抛光液进行了对比。由实验结果可以看出,当固定抛光液中的磨料质量分数时,铜的去除速率随着磨料粒径的减小而升高。当固定磨料粒径不变时,铜的去除速率随着磨料质量分数的升高而迅速升高,而钽略有升高但不明显。当磨料质量分数为5%时,铜和钽的去除速率选择比最优。通过对比实验可以看出,用磨料质量分数为5%的抛光液抛光后,晶圆表面粗糙度较商用抛光液降低了约30%,并且磨料质量分数为5%的抛光液抛光后的晶圆蝶形坑明显优于商用抛光液抛光后的晶圆蝶形坑。The polishing performance of the barrier slurry with low abrasive mass fraction was mainly studied,and it was compared with the commercial slurry.The experiment results show that the copper removal rate is increased with the decrease of the abrasive particle diameter when the abrasive mass fraction of the slurry is fixed.When the abrasive particle diameter is fixed,the copper removal rate is increased rapidly with the increase of the abrasive mass fraction,while the tantalum removal rate increases slightly and not obviously.When the abrasive mass fraction is5%,the selection ratio of the removal rates of copper and tantalum is optimum.The comparison experiment results indicate that the surface roughness of the wafer is reduced by about 30%after polishing by the slurry with 5% abrasive mass fraction than that of the wafer polished by the commercial slurry.Besides,the dishing of the wafer polished by the slurry with 5% abrasive mass faction is obvious superior to that of the wafer polished by the commercial slurry.
分 类 号:TN305.2[电子电信—物理电子学]
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.222