600V槽栅IGBT优良性能的机理分析  

Mechanism Analysis of the 600 V Trench IGBT With Improved Performance

作　　者：吴郁[1] 周璇[1] 金锐 胡冬青[1] 贾云鹏[1] 谭健[1] 赵豹[1] 李哲[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124 [2]国网智能电网研究院电工新材料及微电子研究所,北京100192

出　　处：《北京工业大学学报》2016年第9期1313-1317,共5页Journal of Beijing University of Technology

基　　金：国家自然科学基金资助项目(61176071);国家电网公司科技项目(5455DW150012)

摘　　要：槽栅结构对功率绝缘栅双极晶体管(insulate gate bipolar transistor,IGBT)的影响主要是n-漂移区的电导调制而不是对沟道电阻的改善,为了论证这一问题,采用仿真工具Sentaurus TCAD,针对600 V的Trench IGBT和Planar IGBT两种结构的阻断特性、导通特性和开关特性等进行仿真分析,重点研究了2种结构在导通态时n-漂移区和沟道区各自所占的通态压降的比例以及n-漂移区内的过剩载流子数量.结果表明:2种结构的沟道区压降所占比例较小且相差很少,槽栅结构的n-漂移区内载流子数量远超平面栅结构,电导调制效果更好,即槽栅结构主要是对n-漂移区的电导调制的改善.同时研究了2种IGBT结构的E_(off)-V_(CE(on))折中曲线,发现槽栅IGBT具有更低的通态压降和关断损耗.The influence of the trench structure of the power IGBT is mainly n-drift region conductivity modulation rather than the improvement of the channel resistance. To explain this question,the paper simulation tool Sentaurus TCAD,due to two structures of 600 V Trench-IGBT and Planar-IGBT were used to simulate the breakdown,conducting and switching characteristics,especially in the conduction state.Result shows that the proportion of the channel region is very low and the number of excess carriers in ndrift region is far higher than that of the planar one,so the conductivity modulation is better. That is trench structure is the main factor of the improvement of the n-drift region. At the same time,the EoffVCE( on)trade-off curves of the two different structures were compared,and it is found that the TrenchIGBT has lower on-state voltage drop and lower switch loss.

关 键 词：绝缘栅双极晶体管(insulate gate BIPOLAR transistor IGBT) 槽栅 平面栅 通态压降 关断损耗 

分 类 号：TN323[电子电信—物理电子学]