4H-SiC栅氧氮化工艺优化  

Nitridation Process Optimization of 4H-SiC Gate Oxidation

作　　者：陈喜明[1,2,3] 李诚瞻 赵艳黎 邓小川[2] 张波[2] 

机构地区：[1]新型功率半导体器件国家重点实验室,湖南株洲412001 [2]电子薄膜与集成器件国家重点实验室,四川成都610054 [3]株洲中车时代电气股份有限公司,湖南株洲412001

出　　处：《大功率变流技术》2016年第5期41-45,共5页HIGH POWER CONVERTER TECHNOLOGY

基　　金：国家科技重大专项02专项(2013ZX02305002)

摘　　要：为了改善SiC MOS电容氧化膜的质量和界面态密度,采用正交试验法考察了温度、压力、时间以及一氧化氮气流量等主要氮化工艺参数对4H-SiC MOS电容栅氧特性的影响,发现温度是影响栅氧特性最关键因素。优选出栅氧的最佳氮化工艺条件,并找到氮化工艺条件对击穿电压和界面态密度的影响规律。In order to improve the quality of Si O2 film and interface state density of SiC MOS capacitor, the impact of nitridation pr℃ess parameters on the properties of gate oxide was discussed by orthogonal experimental method, which included temperature, pressure, time and NO gas flow,etc. The results demonstrated that temperature was the most critical factor that influenced the gate oxidation.The promising nitridation condition of gate oxide was optimized, and the law which the nitridation conditions effected on breakdown voltage and interface state density was found.

关 键 词：4H-SIC MOS电容 氮化工艺 击穿电压 界面态密度 

分 类 号：TN304.24[电子电信—物理电子学]