二氟化氙释放牺牲层多晶硅刻蚀速率研究  

Study on Poly-Si Etch Rate About Sacrificial Layer Release With XeF_2

作　　者：司美菊[1] 杜波[1] 田本朗 徐阳[1] 金成飞 蒋欣[1] 江洪敏[1] 马晋毅[1] 

机构地区：[1]中国电子科技集团公司第二十六研究所,重庆400060

出　　处：《压电与声光》2016年第6期926-928,933,共4页Piezoelectrics & Acoustooptics

摘　　要：该文研究了相关工艺参数对二氟化氙(XeF_2)干法释放多晶硅的释放速率的影响。结果表明,对于薄膜体声波谐振器(FBAR)悬臂结构,腔室压力不变时,随着载气N_2流量的增大,刻蚀速率先增加后减少,刻蚀速率最大值为10.3μm/min;载气N2流量不变时,腔室压力越大,工艺腔室参与刻蚀反应的XeF_2气体的浓度增大,刻蚀速率越大。当腔室压力超过1 200Pa时,随着腔室压力的增加,刻蚀速率的增长率逐渐减小。The effect of the process parameters on the release rate through the XeF2 etching to release the poly-Si is studied in this paper. The results show that for the cantilever structure the etch rate increases first and then reduces with the increase of the carrier gas N2 flow in the stable chamber pressure, the maximum etch rate is 10. 3 μm/min. When the carrier gas N2 flow is the constant, the greater the chamber pressure value, the concentration of taking part in the etch reaction in process chamber is increased, the faster the etch rate. While the chamber pressure is greater than 1 200 Pa, the percentage increase for etch rate decreases with the increasing of the chamber pressure.

关 键 词：空气隙 干法刻蚀 刻蚀速率 粗糙度 支撑层 

分 类 号：TN65[电子电信—电路与系统]