用于TSV硅衬底的碱性抛光液研究  

Study on Alkaline Slurry Applied in Silicon Substrate of TSV Process

作　　者：刘俊杰[1,2] 李海清[1,2] 马欣[1,2] 刘玉岭[1,2] 牛新环[1,2] 王如[1,2] 

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130

出　　处：《微电子学》2017年第3期424-428,共5页Microelectronics

基　　金：国家02重大专项资助项目(2016ZX02301003-004-007);河北省自然科学基金资助项目(E2013202247;F2015202267);天津市自然科学基金资助项目(16JCYBJC16100)

摘　　要：在穿透硅通孔(TSV)工艺中,研究了碱性抛光液组分的组合方式和抛光液的稀释倍数对硅衬底去除速率的影响。分析了硅衬底的去除机理;研究了抛光液对Si/Cu去除速率的选择性;研究了抛光液的存储时间不同时pH值和硅衬底去除速率的变化。该抛光液通过在硅溶胶中依次加入表面活性剂、无机碱、有机胺碱,再用去离子水稀释15倍配制而成,并应用于TSV图形片。实验结果表明:该抛光液对硅衬底的去除速率较高,达到1.045μm/min;采用该抛光液对TSV图形片抛光120s后,铜柱露出2μm;抛光液储存时间30天后,硅衬底去除速率仅损失1.3%。该碱性抛光液满足半导体制造行业要求。Based on the through silicon via （TSV） process, the effects of alkaline slurry combinations of components and dilution ratios on the silicon substrate dissolution rate were studied. The removal mechanism of silicon substrate was analyzed. The alkaline slurry selectivity of Si/Cu removal rate was studied. The changes of the pH values and silicon substrate dissolution rates at different standing time of alkaline slurry were studied. The alkaline slurry was made by adding surfactant, inorganic alkali and organic amine alkali in turn in silica sol, and then diluted by 15 times with deionized water. The optimized alkaline slurry was applied on TSV pattern wafers. The experimental results showed that a higher silicon substrate dissolution rate of 1. 045 μm/min had been gotten. The copper on the backside of TSV test wafer was exposed 2 μm after being polished for 120 s. The dissolution rate decreased by only 1.3% after being stored for 30 days. The proposed alkaline slurry met the semiconductor manufacture requirements.

关 键 词：穿透硅通孔 化学机械抛光 抛光液 

分 类 号：TN305.2[电子电信—物理电子学]