石墨烯上生长GaN纳米线的研究  

Growth of GaN Nanowires on Graphene

作　　者：陈丁丁[1] 陈琳[1] 修向前[1] 李悦文[1] 付润定 华雪梅[1] 谢自力[1] 刘斌[1] 陈鹏[1] 张荣[1] 郑有炓[1] 

机构地区：[1]南京大学电子科学与工程学院,南京210046

出　　处：《半导体光电》2017年第6期813-817,共5页Semiconductor Optoelectronics

基　　金：国家"973"计划项目(2016YFB0400100;2016YFB0400602);国家"863"计划项目(2015AA033305);国家自然科学基金项目(61274003;61400401;51461135002;61334009);江苏省自然科学基金项目(BY2013077;BK20141320;BE2015111);固态照明与节能电子学协会同创新中心项目;江苏高校优势学科建设工程资助项目;国网山东电力公司技术开发基金项目

摘　　要：在常压条件下采用化学气相淀积(CVD)技术在有石墨烯插入层的衬底上生长GaN纳米线,研究了生长温度、石墨烯插入层、催化剂等因素对GaN纳米线的形貌、光学特性以及结构的影响。通过扫描电子显微镜(SEM)、光致发光(PL)谱、拉曼(Raman)谱和透射电子显微镜(TEM)等表征手段对GaN纳米线的形貌、光学特性以及结构进行表征。结果表明,在1 100℃条件下,同时有石墨烯插层和催化剂的衬底表面能够获得低应力单晶GaN纳米线。石墨烯、催化剂对于获得低应力单晶GaN纳米线有重要的作用。In this paper,GaN nanowires were grown on substrates with the graphene insert layer by chemical vapor deposition（CVD）technology at atmosphere pressure.The effects of growth temperature,graphene insert layer,catalyst on the morphology,optical properties and structures of GaN nanowires were studied systematically.The morphology,optical properties and structures of GaN nanowires were characterized by scanning electron microscopy（SEM）,photoluminescence（PL）,Raman spectra and transmission electron microscopy（TEM）.The results show that low-stress and single crystal GaN nanowires can be grown on the substrates which both have graphene insert layer and catalyst at 1 100℃.Graphene insert layer and catalyst play an important role in obtaining low-stress and single crystal GaN nanowires.

关 键 词：CVD GAN纳米线 石墨烯 催化剂 单晶 

分 类 号：O472.3[理学—半导体物理]