氢气流量对金刚石膜生长的影响研究  

Effect of Hydrogen Gas Flow Rate on the Deposition of Diamond Films

作　　者：杨广亮[1] 王立秋[2] 吕宪义[1] 金曾孙[1] 

机构地区：[1]吉林大学超硬材料国家重点实验室,长春130023 [2]吉林大学物理学院,长春130023

出　　处：《高等学校化学学报》2002年第9期1735-1737,共3页Chemical Journal of Chinese Universities

摘　　要：研究了电子辅助热灯丝法生长金刚石厚膜过程中氢气流量对沉积速度和膜品质的影响 .随氢气流量从 1 0 0增加到 75 0 cm3/min,金刚石膜的沉积速率单调上升 ,但金刚石膜品质不断下降 ,从 75 0到 1 0 0 0cm3/min,金刚石膜沉积速率下降 ,但金刚石膜品质随氢气流量增加而提高 .拉曼光谱和电子顺磁共振谱研究发现 ,在所制备的金刚石膜中含有替代形式的氮 ,氮含量随氢气流量的增加而减小 ,1 0 0 0 cm3/min流量下沉积的金刚石膜的含氮量仅为 1 0 0 cm3/min流量下沉积的金刚石膜的 1 /4 0 .Thick diamond films have been deposited by Electron Assisted Hot Filament Chemical Vapor Deposition Method. The effects of hydrogen gas flow rate on the diamond films growth rate and diamond qualities have been studied. It is found that, with the gas flow rate increasing, in the range of 100 to 750 cm\+3/min, the diamond films growth rates increase while the diamond qualities get worse, and in the range of 750 to 1 000 cm\+3/min the diamond films growth rates decrease whilethe diamond qualities are improved. Raman spectroscopy and Electron Paramagnetic Resonance has been used to detect the impurities of Nitrogen. The concentration of nitrogen in the diamond film decreases with the increase of gas flow rate, and it is 40 times higher in diamond films deposited at 100 cm\+3/min than that at 1 000 cm\+3/min.

关 键 词：氢气流量 金刚石膜 顺磁氮 顺磁共振 薄膜生长 电子辅助热灯丝法 化学气相沉积 

分 类 号：TB43[一般工业技术] O484[理学—固体物理]