用于制备SOI材料的RF-ZMR技术研究  

RF-ZMR Technology Used for SOI Preparation

作　　者：张鹏飞[1] 钱佩信[1] 林惠旺[1] 柳连俊[1] 

机构地区：[1]清华大学微电子所,北京100084

出　　处：《Journal of Semiconductors》1991年第11期673-678,T001,共7页半导体学报（英文版）

摘　　要：开发了一种新型的RF-ZMR技术,其主要特点是高频感应加热器的石墨板和双石墨条位于SOI 样品的同侧.这样可提高垂直于硅片表面方向的温度梯度,有利于防止背面熔化,并能采用较厚氧化隔离层.实验证明,采用热沉结构的样品经该系统再结晶处理,可以得到完美的无缺陷晶膜. 硅膜熔化后收球是目前进一步发展SOI-ZMR技术的一个技术难点,实验研究表明,简便的RTN技术能有效地抑制硅膜收球.A novel RF-ZMR technology has been developed,The key feature is the RF-induced gra-phite heater with double stripes and graphite board standing to the same side of SOI sample.This gives higher temperature gradient in the direction perpendicular to the surface of SOIwafer,thus prevents the back of the wafer from melting and makes it possible to use thickerisolation SiO_2 layer while the Heat-Sink structure works effectively in localizing crystal de-fects. Defect-free SOI films have been obtained after recrystalization in the RF-ZMR system. It is one of the most important issues to prevent the molten Si from agglomerating.Ex-periments show that RTN (Rapid-Thermali-Nitridation) is a brief and efficient approach tosolve this problem.This insures the further development towards practical manufacture of theRF-ZMR system.

关 键 词：SOI材料 硅单晶 薄膜 RF-ZMR技术 

分 类 号：TN304.055[电子电信—物理电子学]