基于工艺的GaN HEMT抗辐射加固研究进展  

Research Progress on Radiation Hardening of GaN HEMT Based on Process

作　　者：席善斌[1,2] 高金环[1,2] 裴选[1,2] 高东阳 尹丽晶 彭浩[1,2] XI Shanbin;GAO Jinhuan;PEI Xuan;GAO Dongyang;YIN Lijing;PENG Hao(The 13th Research Institute,CETC,Shijiazhuang 050051,China;National Semiconductor Device Quality Supervision and Inspection Center,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]国家半导体器件质量监督检验中心,石家庄050051

出　　处：《微处理机》2019年第2期1-6,共6页Microprocessors

摘　　要：GaN HEMT由于其具有高频、高温、大功率、抗辐射等特性,在卫星、太空探测、核反应堆等辐射环境中具有广阔的应用前景。虽然GaN HEMT较Si基半导体器件具有优越的抗辐射特性,但距GaN材料本身的抗辐射能力和水平仍存在较大差距,GaN HEMT制造工艺是导致这一差距产生的主要原因。通过调研、分析近几年国际报道的GaN HEMT制造工艺对辐射效应的影响,分别从有源区隔离工艺、GaN沟道层厚度、钝化层结构和衬底材料四个方面作出对比,分析可能的原因,给出一种加固工艺优选方法,以期对我国抗辐射加固GaN HEMT研制提供借鉴和指导。GaN HEMT has broad application prospects in satellite,space exploration,nuclear reactor and other radiation environments due to its high frequency,high temperature,high power,radiation hardening and other characteristics.Although GaN HEMT has superior radiation hardening characteristic compared with Si-based semiconductor devices,there is still a large gap between the radiation resistance and the level of GaN materials themselves.The manufacturing process of GaN HEMT is the main reason for this gap.Through investigation and analysis of the influence of GaN HEMT fabrication process reported internationally in recent years on the radiation effect,comparisons are made respectively from four aspects of active region isolation process,GaN channel layer thickness,passivation layer structure and substrate material,possible reasons are analyzed,and an optimization method of reinforcement process is given,so as to provide reference and guidance for the development of radiation-hardened GaN HEMT in China.

关 键 词：GAN HEMT技术 抗辐射加固 有源区隔离工艺 沟道层厚度 钝化层结构 衬底材料 

分 类 号：TN325.3[电子电信—物理电子学]